Texas Instruments CSD85312Q3E MOSFETs Transistors Arrays 20V
CSD85312Q3E
2502-367-CSD85312Q3E
8-PowerVDFN
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V,Drain to Source Voltage (Vdss): 20V
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CSD85312Q3E Tech Specifications
Texas Instruments CSD85312Q3E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Gold | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 24 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 2.5W | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Product Attribute | Attribute Value | |
|---|---|---|
| Base Part Number | CSD85312 | |
| Configuration | COMPLEX | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.5W | |
| Turn On Delay Time | 11 ns | |
| FET Type | 2 N-Channel (Dual) Common Source | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 12.4m Ω @ 10A, 8V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V | |
| Rise Time | 27ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 6 ns | |
| Continuous Drain Current (ID) | 39A | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain to Source Breakdown Voltage | 20V | |
| Pulsed Drain Current-Max (IDM) | 76A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate, 5V Drive | |
| Feedback Cap-Max (Crss) | 40 pF | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Thickness | 900μm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
CSD85312Q3E Documents
Download datasheets and manufacturer documentation for CSD85312Q3E
Datasheets
CSD85312Q3E-Texas-Instruments-datasheet-33010044.pdfPCN Design/Specification
ID symbolization Change 04/Mar/2020PCN Packaging
Retraction of Parts 27/Aug/2018
Others include "CSD85" parts
The following parts include 'CSD85'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| CSD85312Q3E | Texas Instruments | 8-PowerVDFN | 53060 |
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CSD85312Q3E Comments
109 reviews
2023-07-13 00:00:00
useful to me, thanks.
2023-06-11 00:00:00
非常に満足しており、今後もリピート購入します。
2023-05-13 00:00:00
還不錯
2023-01-27 00:00:00
Shipping to the United States took less than a week, which is outstanding in my experience! (Your mileage may vary.)
2022-12-21 00:00:00
I bought some components on their website to build my project, and each component performed well.
2022-11-25 00:00:00
The product is good. I couldn't tested it since I made some mistake in the assembly. But the discution and the explanation with th seller was realy great. I will retry the assembly :)
2022-11-14 00:00:00
Decent.
2022-10-27 00:00:00
I don't have particularly strong feelings about electronic components purchased from Jakelectronic. The quality and performance of the product are OK, there are no obvious problems, but it did not bring me a particularly big surprise.
2022-08-12 00:00:00
I am a satisfied customer of jakelectronics, and I will continue to support them for their excellent service and products.
2022-08-05 00:00:00
It can meet my needs