2SA1873-Y(TE85L,F) Tech Specifications

Toshiba  2SA1873-Y(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Toshiba
Factory Lead Time 12 Weeks
Package / Case 5-TSSOP, SC-70-5, SOT-353
Mounting Type Surface Mount
Mount Surface Mount
hFEMin 120
Collector-Emitter Breakdown Voltage 50V
Published 2009
Packaging Cut Tape (CT)
Operating Temperature 125°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Reach Compliance Code unknown
Product Attribute Attribute Value
Polarity PNP
Element Configuration Dual
Power - Max 200mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual) Matched Pair, Common Emitter
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transition Frequency 80MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
RoHS Status RoHS Compliant
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The following parts include  '2SA18'

Part # Manufacturer Package Availability
2SA1873-Y(TE85L,F) Toshiba Semiconductor and Storage 5-TSSOP, SC-70-5, SOT-353 6521
2SA1873-GR(TE85L,F Toshiba Semiconductor and Storage 5-TSSOP, SC-70-5, SOT-353 5143

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2SA1873-GR(TE85L,F Toshiba Semiconductor and Storage Bipolar Transistors - BJT -150mA -50V 5-TSSOP, SC-70-5, SOT-353
UMA4NTR ROHM Semiconductor TRANS PREBIAS DUAL PNP UMT5 SOT-353
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2SA1873-Y(TE85L,F) Comments

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