2SC4793(F,M) Tech Specifications

Toshiba  2SC4793(F,M) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - Bipolar (BJT) - Single
Manufacturer Toshiba
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Supplier Device Package TO-220NIS
Collector-Emitter Breakdown Voltage 230V
Current-Collector (Ic) (Max) 1A
Number of Elements 1 Element
hFEMin 100
Operating Temperature 150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 230V
Max Power Dissipation 2W
Current Rating 1A
Product Attribute Attribute Value
Frequency 100MHz
Polarity NPN
Element Configuration Single
Power Dissipation 2W
Power - Max 2W
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 230V
Max Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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2SC4793(F,M) Comments

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2SC4793(F,M) brand manufacturers: Toshiba Semiconductor and Storage, MOST stock, 2SC4793(F,M) reference price.Toshiba Semiconductor and Storage. 2SC4793(F,M) parameters, 2SC4793(F,M) Datasheet PDF and pin diagram description download.You can use the 2SC4793(F,M) Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SC4793(F,M) pin diagram and circuit diagram and usage method of function,2SC4793(F,M) electronics tutorials.You can download from the MOST.