RN1901FETE85LF Tech Specifications

Toshiba  RN1901FETE85LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba
Factory Lead Time 12 Weeks
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
Mount Surface Mount
Transistor Element Material SILICON
hFEMin 30
Number of Elements 2 Elements
Collector-Emitter Breakdown Voltage 50V
Published 2014
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Product Attribute Attribute Value
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 10V
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 4.7k Ω
RoHS Status RoHS Compliant
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RN1901FETE85LF Documents

Download datasheets and manufacturer documentation for   RN1901FETE85LF

Others include   "RN190"   parts

The following parts include  'RN190'

Part # Manufacturer Package Availability
RN1901FETE85LF Toshiba Semiconductor and Storage SOT-563, SOT-666 14

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RN1901FETE85LF Comments

109 reviews

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2020-11-11 00:00:00

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