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Introduction to Nexperia Automotive-Grade ICs

Electronics in the automotive industry require accuracy, durability and complete reliability. All systems, including the engine control and modern driver assist, are based on parts that have to endure both high temperature and electrical interference, as well as extended durability of operation.

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ASIC vs FPGA Comparison: Performance, Cost, and Design Differences Explained

This article compares Application-Specific Integrated Circuits (ASICs) and Field-Programmable Gate Arrays (FPGAs), two technologies used for creating custom digital circuits.

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The Rise of Automotive-Grade SiC/GaN Power Devices in Electric Vehicles

The automotive fast recovery Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices emerge as game-changing technologies.

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How to Safely Discharge an AC Capacitor

AC capacitor discharge refers to the process in which a capacitor releases its stored electrical energy in an alternating current (AC) circuit.

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Signs of a Bad Camshaft Position Sensor and How to Test it?

A car has a variety of electrical components, one of which is called a camshaft position sensor (CMP). This section will discuss this component, the signs that indicate a problematic camshaft position sensor, and the procedures for doing so.

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Symptoms of a Bad Speed Sensor and How to Test It?

Speed sensors are utilized to measure the speed at which devices are spinning. Many vehicles, including automobiles, aerospace vehicles, off-highway and construction equipment, railway vehicles, and military vehicles, require speed sensors.

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Current Divider: definition, applications & formula

A current divider is an electrical circuit configuration used to split or divide an input current into multiple branches or paths.

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74LS04 Hex Inverter Datasheet(PDF) and Pinout

This article will explain some detailed information about 74LS04 Hex Inverter, including its datasheet, pinout, features and specifications.

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C1815 Transistor: Pinout, Features & Specifications

This article gives a comprehensive introduction to the key information of the C1815 transistor

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Guide to IC 7408 Logic Gate Chip: Specifications, Applications, and Pinout

The 7408 IC, a crucial component in electronics, features?four logic gates, each with two inputs.

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Dual SiC Power Module Brings Efficiency to Medical and Industrial Applications

Mitsubishi Electric has recently released a new 400A, 1200V dual silicon carbide (SiC) power module with integrated anti-parallel SiC SBD, suitable for medical power supplies and general industrial applications

1618 5 30/09/2022
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Threshold Voltage Stability and Gate Oxide Screening Challenges

A team at the Ohio State University has been studying various aspects of the SiC power MOSFET reliability, including threshold voltage instability and gate oxide reliability.

1876 0 30/09/2022
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Prospects and Challenges of SiC in the Energy Market

High efficiency and chemically inert nature cemented value of Silicon Carbide in power electronics sphere, leading to boom in its utilization.

1096 0 17/09/2022
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GaN HEMTs: Some Device Characteristics and Application Tradeoffs

Reviewing some of the key device characteristics and applications of the more widely available GaN HEMTs along with the tradeoffs

1732 1 17/09/2022
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Enabling High Power Density and Efficient Systems with GaN

While there is some overlap in the power levels that GaN and SiC serve, GaN has fundamental characteristics that make it a better fit for applications in which high power density is critical.

1159 0 17/09/2022
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GaN Epi Wafer Manufacturing for High-Voltage GaN Devices

Gallium nitride has become the de facto material in third-generation semiconductors. However, making GaN wafers in the quality you need and the thermal resistance you desire are challenges that fabs are still trying to overcome.

1423 0 15/07/2022
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GaN Power HEMT > 650 V: A Parametric Analysis and Comparison to SiC MOSFET

This article focuses on the detailed parametric analysis and comparison between GaN Power HEMT > 650 V and SiC MOSFETs over the time.

1367 0 01/07/2022
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Computational Model for Analyzing Wide-Bandgap Semiconductors

Understanding the mechanism of formation of the valence and conduction bands of a semiconductor is of vital importance under the potential technological implications for what concerns the production of new materials.

937 0 01/07/2022
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Innoscience Starts European R&D Centre in GaN Valley of Beligium

Innoscience, a manufacturer of GaN devices started a new R&D centre in Leuven, Belgium and Dr. Jan onsk joined as Vice President of R&D

984 0 01/07/2022
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Monolithic Integration of GaN Components Boosts Power Integrated Circuits

This article analyzes the successful co-integration of high-performance Schottky barrier diodes and D-mode HEMTs on a p-GaN HEMT–based 200-V GaN-on-SOI smart power IC platform.

1310 0 11/05/2022
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New Space-saving Side-wettable Flanks

Nexperia, the expert in essential semiconductors, has recently announced its latest product additions to a growing range of discrete devices which it provides in leadless DFN packages with side-wettable flanks (SWF).

717 0 11/05/2022
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Dynamic Circuit Model of a SiC VJFET

SiC semiconductors perform considerably well on various parameters like high temperatures, frequency, voltage, and several others.

1404 0 28/04/2022