APT24M120B2 Tech Specifications

Microchip  APT24M120B2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Surface Mount NO
Supplier Device Package T-MAX™ [B2]
Number of Terminals 3Terminals
Transistor Element Material SILICON
Package Bulk
Mfr Suntsu Electronics, Inc.
Product Status Active
Base Product Number APT24M120
Current - Continuous Drain (Id) @ 25℃ 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 1040W (Tc)
Package Description ROHS COMPLIANT, T-MAX, 3 PIN
Package Style IN-LINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT24M120B2
Package Shape RECTANGULAR
Manufacturer Microsemi Corporation
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 2.25
Drain Current-Max (ID) 24 A
Operating Temperature -10°C ~ 60°C
Series SXT224
Size / Dimension 0.098 L x 0.079 W (2.50mm x 2.00mm)
JESD-609 Code e3
Pbfree Code Yes
Type MHz Crystal
Product Attribute Attribute Value
Terminal Finish PURE MATTE TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 12.288 MHz
Frequency Stability ±30ppm
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
ESR (Equivalent Series Resistance) 120 Ohms
Configuration SINGLE WITH BUILT-IN DIODE
Load Capacitance 21pF
Operating Mode Fundamental
Case Connection DRAIN
Frequency Tolerance ±25ppm
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 630mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 8370 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±30V
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.63 Ω
Pulsed Drain Current-Max (IDM) 90 A
DS Breakdown Voltage-Min 1200 V
Avalanche Energy Rating (Eas) 1875 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -
Height Seated (Max) 0.026 (0.65mm)
Ratings -
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Part # Manufacturer Package Availability
APT24M120B2 Microchip 4-SMD, No Lead 25

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APT24M120B2 Comments

109 reviews

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2020-11-11 00:00:00

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