APT31M100B2 Tech Specifications

Microchip  APT31M100B2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Mounting Type Panel Mount
Package / Case TO-247-3 Variant
Surface Mount NO
Supplier Device Package T-MAX™ [B2]
Number of Terminals 3Terminals
Transistor Element Material SILICON
Voltage Rating DC 28V
Contact Materials Silver Alloy
Continuous Drain Current Id 32
Package Tube
Base Product Number APT31M100
Current - Continuous Drain (Id) @ 25℃ 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Microchip Technology
Power Dissipation (Max) 1040W (Tc)
Product Status Active
Package Description ROHS COMPLIANT, TMAX-3
Package Style IN-LINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT31M100B2
Package Shape RECTANGULAR
Manufacturer Microsemi Corporation
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 5.32
Drain Current-Max (ID) 32 A
Series 44
Operating Temperature -55°C ~ 150°C (TJ)
Part Status Active
ECCN Code EAR99
Number of Positions 4Positions
Terminal Finish Pure Matte Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Product Attribute Attribute Value
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 5A (AC), 1A (DC)
Pin Count 3
Contact Finish --
Termination Style Solder Lug
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Actuator Type Flatted (6.35mm Dia)
Panel Cutout Dimensions --
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04
Case Connection DRAIN
Number of Decks 1Deck
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380mOhm @ 16A, 10V
Operating Force 5.761 ~ 83gfm
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 8500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Drain to Source Voltage (Vdss) 1000 V
Vgs (Max) ±30V
Polarity/Channel Type N-CHANNEL
Contact Timing Non-Shorting (BBM)
Drain-source On Resistance-Max 0.38 Ω
Pulsed Drain Current-Max (IDM) 120 A
Index Stops Fixed
Circuit per Deck SP4T
Depth Behind Panel 26.04mm
DS Breakdown Voltage-Min 1000 V
Channel Type N
Avalanche Energy Rating (Eas) 1875 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Poles per Deck 1
Angle of Throw 45°
FET Feature -
Features --
Actuator Length 11.10mm
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APT31M100B2 Comments

109 reviews

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2021-06-11 00:00:00

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APT31M100B2 brand manufacturers: Microchip, MOST stock, APT31M100B2 reference price.Microchip. APT31M100B2 parameters, APT31M100B2 Datasheet PDF and pin diagram description download.You can use the APT31M100B2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find APT31M100B2 pin diagram and circuit diagram and usage method of function,APT31M100B2 electronics tutorials.You can download from the MOST.