APT58F50J Tech Specifications

Microchip  APT58F50J technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Lifecycle Status Production (Last Updated: 2 months ago)
Mounting Type Surface Mount
Package / Case HC-49/US
Mount Chassis Mount, Screw
Surface Mount NO
Number of Pins 4Pins
Supplier Device Package ISOTOP®
Number of Terminals 4Terminals
Transistor Element Material SILICON
Package Bulk
Mfr Suntsu Electronics, Inc.
Product Status Active
Base Product Number APT58F50
Current - Continuous Drain (Id) @ 25℃ 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 540W (Tc)
Schedule B 8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
Number of Elements 1 Element
RoHS Compliant
Package Description ROHS COMPLIANT, ISOTOP-4
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Manufacturer Package Code ISOTOP
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT58F50J
Package Shape RECTANGULAR
Manufacturer Microsemi Corporation
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 5.37
Part Package Code ISOTOP
Drain Current-Max (ID) 58 A
Operating Temperature -10°C ~ 70°C
Series SXTHM2
Size / Dimension 0.524 L x 0.197 W (13.30mm x 5.00mm)
Pbfree Code Yes
Type MHz Crystal
Product Attribute Attribute Value
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED
Max Power Dissipation 540 W
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 24 MHz
Frequency Stability ±50ppm
Pin Count 4
JESD-30 Code R-PUFM-X4
Qualification Status Not Qualified
ESR (Equivalent Series Resistance) 30 Ohms
Configuration SINGLE WITH BUILT-IN DIODE
Load Capacitance 19pF
Operating Mode Fundamental
Power Dissipation 540 W
Case Connection ISOLATED
Frequency Tolerance ±50ppm
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 340 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V
Vgs (Max) ±30V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 58 A
Gate to Source Voltage (Vgs) 30 V
Drain-source On Resistance-Max 0.065 Ω
Pulsed Drain Current-Max (IDM) 270 A
Input Capacitance 13.5 nF
DS Breakdown Voltage-Min 500 V
Avalanche Energy Rating (Eas) 1845 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -
Rds On Max 65 mΩ
Height Seated (Max) 0.177 (4.50mm)
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APT58F50J Comments

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