APT34F100L Tech Specifications

Microchip  APT34F100L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Package / Case TO-264-3
Mounting Type Through Hole
Supplier Device Package TO-264 [L]
RoHS Details
Mounting Styles Through Hole
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 1 kV
Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 380 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 305 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.135 kW
Channel Mode Enhancement
Forward Transconductance - Min 39 S
Factory Pack QuantityFactory Pack Quantity 1
Typical Turn-Off Delay Time 150 ns
Typical Turn-On Delay Time 39 ns
Unit Weight 0.352740 oz
Continuous Drain Current Id 35
Package Tube
Product Attribute Attribute Value
Base Product Number APT34F100
Current - Continuous Drain (Id) @ 25℃ 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Microchip Technology
Power Dissipation (Max) 1135W (Tc)
Product Status Active
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 1.135
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 9835 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 305 nC @ 10 V
Rise Time 40 ns
Drain to Source Voltage (Vdss) 1000 V
Vgs (Max) ±30V
Channel Type N
FET Feature -
Height 26.49 mm
Length 20.5 mm
Width 5.21 mm
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APT34F100L Comments

109 reviews

Jeff
2024-03-06 00:00:00

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2024-03-04 15:56:56

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2024-02-21 00:00:00

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2024-01-24 00:00:00

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2024-01-12 00:00:00

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2024-01-03 00:00:00

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2023-11-28 00:00:00

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2023-11-22 00:00:00

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2023-11-21 00:00:00

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