APT56F50B2 Tech Specifications

Microchip  APT56F50B2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case T-MAX-3
Mounting Type Through Hole
Mount Through Hole
Surface Mount NO
Number of Pins 3Pins
Supplier Device Package T-MAX™ [B2]
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Mounting Styles Through Hole
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 56 A
Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 220 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 780 W
Channel Mode Enhancement
Fall Time 33 ns
Forward Transconductance - Min 43 S
Factory Pack QuantityFactory Pack Quantity 1
Typical Turn-Off Delay Time 100 ns
Typical Turn-On Delay Time 38 ns
Unit Weight 0.208116 oz
Package Tube
Base Product Number APT56F50
Current - Continuous Drain (Id) @ 25℃ 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Microchip Technology
Power Dissipation (Max) 780W (Tc)
Product Status Active
Number of Elements 1 Element
Turn Off Delay Time 100 ns
Package Description ROHS COMPLIANT PACKAGE-3
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT56F50B2
Package Shape RECTANGULAR
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 1.5
Product Attribute Attribute Value
Part Package Code TO-247AB
Drain Current-Max (ID) 56 A
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 8™
JESD-609 Code e3
Pbfree Code Yes
Terminal Finish PURE MATTE TIN
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Additional Feature AVALANCHE RATED
Max Power Dissipation 780 W
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration Single
Number of Channels 1 ChannelChannel
Operating Mode ENHANCEMENT MODE
Power Dissipation 780 W
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Rise Time 45 ns
Drain to Source Voltage (Vdss) 500 V
Vgs (Max) ±30V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 56 A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 30 V
Drain-source On Resistance-Max 0.1 Ω
Pulsed Drain Current-Max (IDM) 175 A
Input Capacitance 8.8 nF
DS Breakdown Voltage-Min 500 V
Avalanche Energy Rating (Eas) 1200 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -
Rds On Max 100 mΩ
Height 21.46 mm
Length 16.26 mm
Width 5.31 mm
Radiation Hardening No
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APT56F50B2 Microchip Technology T-MAX-3 115

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APT56F50B2 Comments

109 reviews

Mulligan
2021-02-27 00:00:00

Their range of products covers both common and hard-to-find components, a great resource for electronic enthusiasts.

DanielFletcher
2021-02-26 00:00:00

I have used this to measure various antennas, and it is useful.

Joshua
2021-02-25 00:00:00

This is great for imaging my retro-pc floppies. It worked out of the box with minimal setup. Hooked up my floppy drive, fired up my imaging software and it all just worked.

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2021-02-25 00:00:00

Customer service was responsive.

Fernando
2021-01-23 00:00:00

I especially appreciate their detailed product descriptions and technical specifications, which allow me to make informed purchasing decisions.

Gareth Cattermole
2021-01-14 00:00:00

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2021-01-07 00:00:00

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2020-12-25 00:00:00

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Sophia
2020-11-28 00:00:00

Great project!

Ali
2020-11-26 00:00:00

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