Microsemi Corporation APT35GP120B2DQ2G Single IGBTs 1.2kV 96A 1200V
APT35GP120B2DQ2G
1619-372-APT35GP120B2DQ2G
TO-247-3 Variant
RoHS Compliant
Voltage - Collector Emitter Breakdown (Max): 1200V,Max Power Dissipation: 543W,Collector Emitter Voltage (VCEO): 1.2kV,Max Collector Current: 96A
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APT35GP120B2DQ2G Tech Specifications
Microsemi APT35GP120B2DQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - IGBTs - Single | |
| Manufacturer | Microsemi | |
| Factory Lead Time | 33 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Variant | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Test Conditions | 600V, 35A, 4.3 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | POWER MOS 7® | |
| Published | 1999 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Voltage - Rated DC | 1.2kV |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Power Dissipation | 543W | |
| Current Rating | 96A | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 96A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 36 ns | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 35A | |
| Turn Off Time-Nom (toff) | 220 ns | |
| IGBT Type | PT | |
| Gate Charge | 150nC | |
| Current - Collector Pulsed (Icm) | 140A | |
| Td (on/off) @ 25°C | 16ns/95ns | |
| Switching Energy | 750μJ (on), 680μJ (off) | |
| Gate-Emitter Thr Voltage-Max | 6V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
APT35GP120B2DQ2G Documents
Download datasheets and manufacturer documentation for APT35GP120B2DQ2G
Others include "APT35" parts
The following parts include 'APT35'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| APT35GN120L2DQ2G | Microsemi Corporation | TO-264-3, TO-264AA | |
| APT35GP120BG | Microsemi Corporation | TO-247-3 | 175 |
| APT35GN120BG | Microsemi Corporation | TO-247-3 | 5751 |
| APT35GP120B2DQ2G | Microsemi Corporation | TO-247-3 Variant | |
| APT35GA90B | Microsemi Corporation | TO-247-3 | |
| APT35GA90BD15 | Microsemi Corporation | TO-247-3 | 5 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
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 | STGWA40M120DF3 | STMicroelectronics | STMICROELECTRONICS STGWA40M120DF3 IGBT Single Transistor, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 Pins | TO-247-3 | |
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APT35GP120B2DQ2G Comments
109 reviews
2020-11-11 00:00:00
I would purchase again.
2020-10-20 00:00:00
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2020-10-09 00:00:00
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2020-09-28 00:00:00
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2020-09-18 00:00:00
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2020-09-12 00:00:00
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