APT40GR120B Tech Specifications

Microsemi  APT40GR120B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - IGBTs - Single
Manufacturer Microsemi
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Collector-Emitter Breakdown Voltage 1.2kV
Test Conditions 600V, 40A, 4.3 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500W
Element Configuration Single
Input Type Standard
Product Attribute Attribute Value
Power - Max 500W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 88A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
IGBT Type NPT
Gate Charge 210nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 22ns/163ns
Switching Energy 1.38mJ (on), 906μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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APT40GR120B Documents

Download datasheets and manufacturer documentation for   APT40GR120B

Others include   "APT40"   parts

The following parts include  'APT40'

Part # Manufacturer Package Availability
APT40GR120B Microsemi Corporation TO-247-3 32363
APT40GR120B2D30 Microsemi Corporation TO-247-3 32363
APT40GR120B2SCD10 Microsemi Corporation TO-247-3

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APT40GR120B Comments

109 reviews

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2020-11-11 00:00:00

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