FDP10N60NZ Tech Specifications

ON Semiconductor  FDP10N60NZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 185W Tc
Turn Off Delay Time 70 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET-II™
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Element Configuration Single
Product Attribute Attribute Value
Operating Mode ENHANCEMENT MODE
Power Dissipation 185W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1475pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 50ns
Vgs (Max) ±25V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.75Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 550 mJ
Height 16.07mm
Length 10.36mm
Width 4.9mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
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FDP10N60NZ Documents

Download datasheets and manufacturer documentation for   FDP10N60NZ

Others include   "FDP10"   parts

The following parts include  'FDP10'

Part # Manufacturer Package Availability
FDP10N60NZ ON Semiconductor TO-220-3 86000

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FDP10N60NZ Comments

109 reviews

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2020-11-11 00:00:00

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2020-10-20 00:00:00

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