FDP12N60NZ Tech Specifications

ON Semiconductor  FDP12N60NZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Power Dissipation (Max) 240W Tc
Turn Off Delay Time 80 ns
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET-II™
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Element Configuration Single
Product Attribute Attribute Value
Operating Mode ENHANCEMENT MODE
Power Dissipation 240W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1676pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 50ns
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.65Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 565 mJ
Width 4.83mm
Length 10.67mm
Height 16.51mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
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Part # Manufacturer Package Availability
FDP12N60NZ ON Semiconductor TO-220-3 80000

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FDP12N60NZ Comments

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