FQP3N60C Tech Specifications

ON Semiconductor  FQP3N60C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 75W Tc
Turn Off Delay Time 35 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 3.4Ohm
Product Attribute Attribute Value
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 565pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 30ns
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 600V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FQP3N60C Documents

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FQP3N60 ON Semiconductor TO-220-3 36269
FQP3N25 ON Semiconductor TO-220-3 6533
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FQP3N80 ON Semiconductor TO-220-3
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FQP3N60C Comments

109 reviews

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2024-03-06 00:00:00

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2024-03-04 15:56:56

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2023-11-28 00:00:00

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2023-11-22 00:00:00

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2023-11-21 00:00:00

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