FQP3N80C Tech Specifications

ON Semiconductor  FQP3N80C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 107W Tc
Turn Off Delay Time 22.5 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 4.8Ohm
Voltage - Rated DC 800V
Product Attribute Attribute Value
Current Rating 3A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Rise Time 43.5ns
Vgs (Max) ±30V
Fall Time (Typ) 32 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 800V
Dual Supply Voltage 800V
Nominal Vgs 5 V
Height 9.4mm
Length 10.1mm
Width 4.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FQP3N80C Documents

Download datasheets and manufacturer documentation for   FQP3N80C

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FQP3N80C Comments

109 reviews

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2020-11-11 00:00:00

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2020-10-20 00:00:00

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2020-10-09 00:00:00

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2020-09-28 00:00:00

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2020-07-03 00:00:00

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2020-06-26 00:00:00

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2020-06-17 00:00:00

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