ON Semiconductor HGTG7N60A4D Single IGBTs 600V 34A
HGTG7N60A4D
1807-372-HGTG7N60A4D
TO-247-3
RoHS Compliant
Max Power Dissipation: 125W,Collector Emitter Voltage (VCEO): 600V,Max Collector Current: 34A
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HGTG7N60A4D Tech Specifications
ON Semiconductor HGTG7N60A4D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - IGBTs - Single | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) | |
| Factory Lead Time | 44 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Weight | 6.39g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 1.9V | |
| Number of Elements | 1 Element | |
| Test Conditions | 390V, 7A, 25 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOW CONDUCTION LOSS |
| Product Attribute | Attribute Value | |
|---|---|---|
| HTS Code | 8541.29.00.95 | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 125W | |
| Current Rating | 34A | |
| Element Configuration | Single | |
| Power Dissipation | 125W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Rise Time | 11ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 34A | |
| Reverse Recovery Time | 22 ns | |
| Turn On Time | 17 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A | |
| Turn Off Time-Nom (toff) | 205 ns | |
| Gate Charge | 37nC | |
| Current - Collector Pulsed (Icm) | 56A | |
| Td (on/off) @ 25°C | 11ns/100ns | |
| Switching Energy | 55μJ (on), 60μJ (off) | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
HGTG7N60A4D Documents
Download datasheets and manufacturer documentation for HGTG7N60A4D
PCN Assembly/Origin
Mult Dev Assembly/DS Chg 6/Jan/2019Datasheets
HGTG7N60A4D-ON-Semiconductor-datasheet-85560623.pdf HGTG7N60A4D HGTG7N60A4D-Fairchild-datasheet-22080.pdf HGTG7N60A4D-Fairchild-Semiconductor-datasheet-21199287.pdfPCN Design/Specification
Plating Material 20/Dec/2007 Logo 17/Aug/2017Environmental Information
Material Declaration HGTG7N60A4DRohsStatement
Fairchild-Semiconductor-HGTG7N60A4D.pdfPCN Packaging
Mult Devices 24/Oct/2017TechnicalDrawing
Fairchild-Semiconductor-HGTG7N60A4D.pdf
Others include "HGTG7" parts
The following parts include 'HGTG7'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| HGTG7N60A4D | ON Semiconductor | TO-247-3 | 4000 |
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Alternate Products
| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | HGTG7N60A4D | ON Semiconductor | IGBT 600V 34A 125W TO247 | TO-247-3 | |
 | IRG4PC30FPBF | Infineon Technologies | IGBT 600V 31A 100W TO247AC | TO-247-3 | |
 | FGH20N6S2D | ON Semiconductor | IGBT 600V 28A 125W TO247 | TO-247-3 | |
| FGH20N6S2 | ON Semiconductor | IGBT 600V 28A 125W TO247 | TO-247-3 | |
| IRG4PC30SPBF | Infineon Technologies | IGBT 600V 34A 100W TO247AC | TO-247-3 |
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HGTG7N60A4D Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
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2024-01-12 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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