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HGTP12N60A4D Tech Specifications
ON Semiconductor HGTP12N60A4D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - IGBTs - Single | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) | |
| Factory Lead Time | 5 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Weight | 1.8g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Number of Elements | 1 Element | |
| Test Conditions | 390V, 12A, 10 Ω, 15V | |
| Turn Off Delay Time | 96 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2002 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOW CONDUCTION LOSS | |
| HTS Code | 8541.29.00.95 | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 167W |
| Product Attribute | Attribute Value | |
|---|---|---|
| Current Rating | 54A | |
| Base Part Number | HGTP12N60 | |
| Element Configuration | Single | |
| Power Dissipation | 167W | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Turn On Delay Time | 17 ns | |
| Transistor Application | POWER CONTROL | |
| Rise Time | 8ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 54A | |
| Reverse Recovery Time | 18 ns | |
| Turn On Time | 33 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A | |
| Continuous Collector Current | 54A | |
| Turn Off Time-Nom (toff) | 180 ns | |
| Gate Charge | 78nC | |
| Current - Collector Pulsed (Icm) | 96A | |
| Td (on/off) @ 25°C | 17ns/96ns | |
| Switching Energy | 55μJ (on), 50μJ (off) | |
| Height | 9.4mm | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
HGTP12N60A4D Documents
Download datasheets and manufacturer documentation for HGTP12N60A4D
Datasheets
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS TO220B03 Pkg Drawing HGTP12N60A4D-ON-Semiconductor-datasheet-85559932.pdf HGTP12N60A4D-ON-Semiconductor-datasheet-12526035.pdf HGTP12N60A4D-ON-Semiconductor-datasheet-86691039.pdf HGTP12N60A4D-Fairchild-Semiconductor-datasheet-67131953.pdf HGTP12N60A4D-ON-Semiconductor-datasheet-81454974.pdfEnvironmental Information
Material Declaration HGTP12N60A4DPCN Design/Specification
Logo 17/Aug/2017PCN Assembly/Origin
Mult Dev Mold Chg 28/Oct/2019PCN Packaging
Mult Devices 24/Oct/2017TechnicalDrawing
Fairchild-Semiconductor-HGTP12N60A4D.pdfReachStatement
Fairchild-Semiconductor-HGTP12N60A4D.pdf
Others include "HGTP1" parts
The following parts include 'HGTP1'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| HGTP10N120BN | ON Semiconductor | TO-220-3 | 50 |
| HGTP12N60A4D | ON Semiconductor | TO-220-3 | 800 |
| HGTP12N60C3D | ON Semiconductor | TO-220-3 | 650 |
| HGTP12N60A4 | ON Semiconductor | TO-220-3 | 1095 |
| HGTP14N44G3VL | ON Semiconductor | - | |
| HGTP12N60C3 | ON Semiconductor | TO-220-3 |
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HGTP12N60A4D Comments
109 reviews
2021-06-11 00:00:00
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2021-06-10 00:00:00
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2021-03-13 00:00:00
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