ON Semiconductor NDDP010N25AZT4H Single MOSFETs Transistors 10A
NDDP010N25AZT4H
1807-369-NDDP010N25AZT4H
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Compliant
Continuous Drain Current (ID): 10A
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NDDP010N25AZT4H Tech Specifications
ON Semiconductor NDDP010N25AZT4H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 10A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1W Ta 52W Tc | |
| Turn Off Delay Time | 44 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Terminal Position | SINGLE |
| Product Attribute | Attribute Value | |
|---|---|---|
| Terminal Form | GULL WING | |
| Reach Compliance Code | not_compliant | |
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 18 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 420m Ω @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V | |
| Rise Time | 26ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 31 ns | |
| Continuous Drain Current (ID) | 10A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain-source On Resistance-Max | 0.42Ohm | |
| Drain to Source Breakdown Voltage | 250V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NDDP010N25AZT4H Documents
Download datasheets and manufacturer documentation for NDDP010N25AZT4H
ReachStatement
ON-Semiconductor-company-79.pdfEnvironmental Information
Material Declaration NDDP010N25AZT4HDatasheets
NDDP010N25AZ NDDP010N25AZT4H-ON-Semiconductor-datasheet-37177264.pdf
Others include "NDDP0" parts
The following parts include 'NDDP0'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| NDDP010N25AZT4H | ON Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30 |
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| Part # | Manufacturer | Description | Package | RoHS | |
|---|---|---|---|---|---|
 | NDDP010N25AZT4H | ON Semiconductor | MOSFET NCH 10A 250V TP-FA(DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
 | FQD9N25TM-F080 | ON Semiconductor | Trans MOSFET N-CH 250V 7.4A 3-Pin(2 Tab) DPAK T/R | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FQD9N25TM-F085 | ON Semiconductor | MOSFET 250V N-Channel QFET | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IRFR13N20DTRPBF | Infineon Technologies | MOSFET N-CH 200V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NDDP010N25AZT4H Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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