NGTB30N135IHRWG Tech Specifications

ON Semiconductor  NGTB30N135IHRWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Product Attribute Attribute Value
Category Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3Pins
Weight 6.500007g
Collector-Emitter Breakdown Voltage 1.35kV
Test Conditions 600V, 30A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 394W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Product Attribute Attribute Value
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 394W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35kV
Max Collector Current 60A
Voltage - Collector Emitter Breakdown (Max) 1350V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 234nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/250ns
Switching Energy 850μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NGTB30N135IHRWG Documents

Download datasheets and manufacturer documentation for   NGTB30N135IHRWG

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NGTB30N135IHRWG Comments

109 reviews

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2020-11-11 00:00:00

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