ON Semiconductor NTLJD3181PZTBG MOSFETs Transistors Arrays 20V
NTLJD3181PZTBG
1807-367-NTLJD3181PZTBG
6-WDFN Exposed Pad
RoHS Compliant
Drain to Source Voltage (Vdss): 20V,Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
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NTLJD3181PZTBG Tech Specifications
ON Semiconductor NTLJD3181PZTBG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-WDFN Exposed Pad | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 14 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 710mW | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Product Attribute | Attribute Value | |
|---|---|---|
| Pin Count | 6 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.5W | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.8nC @ 4.5V | |
| Rise Time | 9ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 9 ns | |
| Continuous Drain Current (ID) | 2.2A | |
| Gate to Source Voltage (Vgs) | 8V | |
| Drain Current-Max (Abs) (ID) | 3.2A | |
| Drain-source On Resistance-Max | 0.1Ohm | |
| Drain to Source Breakdown Voltage | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NTLJD3181PZTBG Documents
Download datasheets and manufacturer documentation for NTLJD3181PZTBG
Datasheets
NTLJD3181PZPCN Obsolescence/ EOL
Multiple Devices 21/Jan/2010ReachStatement
ON-Semiconductor-company-79.pdf
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NTLJD3181PZTBG Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-12 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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