ON Semiconductor NTMD6P02R2SG MOSFETs Transistors Arrays 20V
NTMD6P02R2SG
1807-367-NTMD6P02R2SG
8-SOIC (0.154, 3.90mm Width)
RoHS Compliant
Drain to Source Voltage (Vdss): 20V,Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
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NTMD6P02R2SG Tech Specifications
ON Semiconductor NTMD6P02R2SG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 50 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Voltage - Rated DC | -20V | |
| Max Power Dissipation | 750mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -7.8A | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Base Part Number | NTMD6P02 | |
| Pin Count | 8 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 6.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V | |
| Rise Time | 65ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 80 ns | |
| Continuous Drain Current (ID) | 4.8A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 6.2A | |
| Drain-source On Resistance-Max | 0.033Ohm | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Feedback Cap-Max (Crss) | 450 pF | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NTMD6P02R2SG Documents
Download datasheets and manufacturer documentation for NTMD6P02R2SG
ReachStatement
ON-Semiconductor-company-79.pdfDatasheets
NTMD6P02R2PCN Obsolescence/ EOL
Multiple Devices 01/Oct/2008PCN Design/Specification
Multiple Devices Copper Wire 20/Aug/2008
Others include "NTMD6" parts
The following parts include 'NTMD6'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| NTMD6P02R2SG | ON Semiconductor | 8-SOIC (0.154, 3.90mm Width) |
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NTMD6P02R2SG Comments
109 reviews
2024-03-06 00:00:00
I've recommended jakelectronics to my colleagues
2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
Overall, it was good
2024-01-12 00:00:00
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2024-01-10 00:00:00
Excellent seller, always ready to help.
2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
I have purchased electronic components from jakelectronic several times and found that the quality of their products is consistent.
2023-11-21 00:00:00
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