ON Semiconductor NVMFD5877NLWFT1G MOSFETs Transistors Arrays 60V
NVMFD5877NLWFT1G
1807-367-NVMFD5877NLWFT1G
8-PowerTDFN
RoHS Compliant
Drain to Source Voltage (Vdss): 60V,Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
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NVMFD5877NLWFT1G Tech Specifications
ON Semiconductor NVMFD5877NLWFT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | ON Semiconductor | |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 4 days ago) | |
| Factory Lead Time | 13 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 6A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 3.2W | |
| Terminal Form | FLAT | |
| Pin Count | 8 | |
| Reference Standard | AEC-Q101 |
| Product Attribute | Attribute Value | |
|---|---|---|
| JESD-30 Code | R-PDSO-F6 | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 3.2W | |
| Case Connection | DRAIN | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 39m Ω @ 7.5A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (ID) | 17A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 6A | |
| Drain-source On Resistance-Max | 0.06Ohm | |
| Pulsed Drain Current-Max (IDM) | 74A | |
| DS Breakdown Voltage-Min | 60V | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NVMFD5877NLWFT1G Documents
Download datasheets and manufacturer documentation for NVMFD5877NLWFT1G
Datasheets
NVMFD5877NL NVMFD5877NLWFT1G-ON-Semiconductor-datasheet-13503392.pdfEnvironmental Information
Material Declaration NVMFD5877NLWFT1GRohsStatement
ON-Semiconductor-NVMFD5877NLWFT1G.pdf
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NVMFD5877NLWFT1G Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-12 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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