Texas Instruments CSD85301Q2T MOSFETs Transistors Arrays 20V
CSD85301Q2T
2502-367-CSD85301Q2T
6-WDFN Exposed Pad
RoHS Compliant
Drain to Source Voltage (Vdss): 20V,Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
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CSD85301Q2T Tech Specifications
Texas Instruments CSD85301Q2T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Product Attribute | Attribute Value | |
|---|---|---|
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-WDFN Exposed Pad | |
| Number of Pins | 6Pins | |
| Weight | 9.695537mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 14 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 2.3W | |
| Terminal Form | NO LEAD | |
| Base Part Number | CSD85301 | |
| Number of Channels | 2Channels | |
| Element Configuration | Dual |
| Product Attribute | Attribute Value | |
|---|---|---|
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 6 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 27m Ω @ 5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 469pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V | |
| Rise Time | 26ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 15 ns | |
| Continuous Drain Current (ID) | 5A | |
| Threshold Voltage | 900mV | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain Current-Max (Abs) (ID) | 5A | |
| Drain-source On Resistance-Max | 0.039Ohm | |
| Drain to Source Breakdown Voltage | 20V | |
| Avalanche Energy Rating (Eas) | 3.8 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate, 5V Drive | |
| Length | 2mm | |
| Width | 2mm | |
| Thickness | 750μm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
CSD85301Q2T Documents
Download datasheets and manufacturer documentation for CSD85301Q2T
PCN Assembly/Origin
CSDYYY 01/Feb/2019
Others include "CSD85" parts
The following parts include 'CSD85'
| Part # | Manufacturer | Package | Availability |
|---|---|---|---|
| CSD85301Q2T | Texas Instruments | 6-WDFN Exposed Pad | 1470 |
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CSD85301Q2T Comments
109 reviews
2024-03-06 00:00:00
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2024-03-04 15:56:56
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2024-02-21 00:00:00
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2024-01-24 00:00:00
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2024-01-12 00:00:00
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2024-01-10 00:00:00
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2024-01-03 00:00:00
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2023-11-28 00:00:00
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2023-11-22 00:00:00
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2023-11-21 00:00:00
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